Ficha miembro
Fernando Manuel Lloret Vieira
Profesor Sustituto Interino
Ciencia e Ingeniería de los Materiales
Ciencia de los Materiales e Ingeniería Metalúrgica
Profesor Sustituto Interino Ciencia e Ingeniería de los Materiales Ciencia de los Materiales e Ingeniería Metalúrgica 
Ultimos articulos publicados
1.- HYDROGEN IMPLANTATION-INDUCED BLISTERING IN DIAMOND: TOWARD DIAMOND LAYER TRANSFER BY THE SMART CUT™ TECHNIQUE 2022 - Diamond and Related Materials, Vol.126, Issue -, pp -
Masante, C.; de Vecchy, J.; Mazen, F.; Milesi, F.; Di Cioccio, L.; Pernot, J.; Lloret, F.; Araujo, D.; Pinero, J.C.; Rochat, N.; Pierre, F.; Servant, F.; Widiez, J.;
JCR Factor
3.315
JCR
Q2
Rank Cat.
53/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
69.048
SJR Factor
0.651
CiteScore
Q1
Rank Cat.
139/596
Cat. ASJC
MECHANICAL ENGINEERING
CiteScore
4.4
SNIP
1.095
Articulos publicados durante el periodo 2017 - 2021.
1.- DIAMOND/Γ-ALUMINA BAND OFFSET DETERMINATION BY XPS 2021 - Applied Surface Science, Vol.535, Issue 1, pp 146301[1]-146301[8]
Cañas, J.; Alba, G.; Leinen, D.; Lloret, F.; Gutierrez, M.; Eon, D.; Pernot, J.; Gheeraert, E.; Araújo, D.;
JCR Factor
6.707
JCR
Q1
Rank Cat.
1/21
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.619
SJR Factor
1.295
CiteScore
Q1
Rank Cat.
23/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
10.7
SNIP
1.382
2.- STUDY OF EARLY STAGES IN THE GROWTH OF BORON-DOPED DIAMOND ON CARBON FIBERS 2021 - Physica Status Solidi (A) Applications and Materials Science, Vol.218, Issue 5, pp 1-6
Millán-Barba, J.; Gutiérrez, M.; Lloret, F.; de Villoria, R.G.; Alcántara, R.; Haenen, K.; Araújo, D.;
JCR Factor
1.981
JCR
Q3
Rank Cat.
100/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
37.812
SJR Factor
0.532
CiteScore
Q2
Rank Cat.
106/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.4
SNIP
0.695
3.- IMPACT OF METHANE CONCENTRATION ON SURFACE MORPHOLOGY AND BORON INCORPORATION OF HEAVILY BORON-DOPED SINGLE CRYSTAL DIAMOND LAYERS 2021 - Carbon, Vol.172, Issue -, pp 463-473
Rouzbahani, R.; Nicley, S.S.; Vanpoucke, D.E.P.; Lloret, F.; Pobedinskas, P.; Araújo, D.; Haenen, K.;
JCR Factor
9.594
JCR
Q1
Rank Cat.
42/335
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
87.612
SJR Factor
2.25
CiteScore
Q1
Rank Cat.
21/455
Cat. ASJC
MATERIALS SCIENCE (ALL)
CiteScore
15.7
SNIP
1.723
4.- DISLOCATION GENERATION MECHANISMS IN HEAVILY BORON-DOPED DIAMOND EPILAYERS 2021 - Applied Physics Letters, Vol.118, Issue 5, pp -
Araujo, D.; Lloret, F.; Alba, G.; Alegre, M.P.; Villar, M.P.;
JCR Factor
3.791
JCR
Q2
Rank Cat.
47/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
70.938
SJR Factor
1.182
CiteScore
Q1
Rank Cat.
6/58
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.9
SNIP
1.142
DOI: 10.1063/5.0031476
5.- SELECTIVELY BORON DOPED HOMOEPITAXIAL DIAMOND GROWTH FOR POWER DEVICE APPLICATIONS 2021 - Applied Physics Letters, Vol.118, Issue 2, pp -
Lloret, F.; Eon, D.; Bustarret, E.; Donatini, F.; Araujo, D.;
JCR Factor
3.791
JCR
Q2
Rank Cat.
47/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
70.938
SJR Factor
1.182
CiteScore
Q1
Rank Cat.
6/58
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.9
SNIP
1.142
DOI: 10.1063/5.0031478
6.- DIAMOND FOR ELECTRONICS: MATERIALS, PROCESSING AND DEVICES 2021 - Materials, Vol.14, Issue 22, pp 7081(1)-7081(25)
Araujo, D.; Suzuki, M.; Lloret, F.; Alba, G.; Villar, P.;
JCR Factor
3.623
JCR
Q1
Rank Cat.
17/80
Cat. JCR
METALLURGY & METALLURGICAL ENGINEERING
Percentile JCR
79.375
SJR Factor
0.682
CiteScore
Q2
Rank Cat.
135/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
4.2
SNIP
1.261
DOI: 10.3390/ma14227081
7.- LATTICE PERFORMANCE DURING INITIAL STEPS OF THE SMART-CUT™ PROCESS IN SEMICONDUCTING DIAMOND: A STEM STUDY 2020 - Applied Surface Science, Vol.528, Issue 2020, pp 146998[1]-146998[6]
Piñero, J.C.; de Vecchy, J.; Fernández, D.; Alba, G.; Widiez, J.; Di Cioccio, L.; Lloret, F.; Araújo, D.; Pernot, J.;
JCR Factor
6.707
JCR
Q1
Rank Cat.
1/21
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.619
SJR Factor
1.295
CiteScore
Q1
Rank Cat.
23/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
10.7
SNIP
1.382
8.- IMPROVED FIELD ELECTRON EMISSION PROPERTIES OF PHOSPHORUS AND NITROGEN CO-DOPED NANOCRYSTALLINE DIAMOND FILMS 2020 - Nanomaterials, Vol.10, Issue 6, pp 1024[1]-1024[11]
Lloret, F.; Sankaran, K.J.; Millan-Barba, J.; Desta, D.; Rouzbahani, R.; Pobedinskas, P.; Gutierrez, M.; Boyen, H.G.; Haenen, K.;
JCR Factor
5.076
JCR
Q1
Rank Cat.
35/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
78.438
SJR Factor
0.919
CiteScore
Q1
Rank Cat.
58/279
Cat. ASJC
CHEMICAL ENGINEERING (ALL)
CiteScore
5.4
SNIP
1.129
DOI: 10.3390/nano10061024
9.- MICROWAVE PERMITTIVITY OF TRACE SP2 CARBON IMPURITIES IN SUB-MICRON DIAMOND POWDERS 2018 - ACS Omega, Vol.3, Issue 2, pp 2183-2192
Cuenca, J.A.; Thomas, E.L.H.; Mandal, S.; Morgan, D.J.; Lloret, F.; Araújo, D.; Williams, O.A.; Porch, A.;
JCR Factor
2.584
JCR
Q2
Rank Cat.
76/172
Cat. JCR
CHEMISTRY, MULTIDISCIPLINARY
Percentile JCR
56.105
SJR Factor
0.754
CiteScore
Q3
Rank Cat.
162/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
1.4
SNIP
0.683
10.- HIGH RESOLUTION BORON CONTENT PROFILOMETRY AT Δ-DOPING EPITAXIAL DIAMOND INTERFACES BY CTEM 2018 - Applied Surface Science, Vol.461, Issue -, pp 221-226
Piñero, J.C.; Lloret, F.; Alegre, M.P.; Villar, M.P.; Fiori, A.; Bustarret, E.; Araújo, D.;
JCR Factor
5.155
JCR
Q1
Rank Cat.
1/20
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.5
SJR Factor
1.115
CiteScore
Q1
Rank Cat.
27/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
7.5
SNIP
1.352
11.- DETERMINATION OF ALUMINA BANDGAP AND DIELECTRIC FUNCTIONS OF DIAMOND MOS BY STEM-VEELS 2018 - Applied Surface Science, Vol.461, Issue -, pp 93-97
Cañas, J.; Piñero, J.C.; Lloret, F.; Gutierrez, M.; Pham, T.; Pernot, J.; Araújo, D.;
JCR Factor
5.155
JCR
Q1
Rank Cat.
1/20
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.5
SJR Factor
1.115
CiteScore
Q1
Rank Cat.
27/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
7.5
SNIP
1.352
12.- THREE-DIMENSIONAL DIAMOND MPCVD GROWTH OVER MESA STRUCTURES: A GEOMETRIC MODEL FOR GROWTH SECTOR CONFIGURATION 2018 - Crystal Growth and Design, Vol.18, Issue 12, pp 7628-7632
Lloret, F.; Araújo, D.; Eon, D.; Bustarret, E.;
JCR Factor
4.153
JCR
Q1
Rank Cat.
3/26
Cat. JCR
CRYSTALLOGRAPHY
Percentile JCR
90.385
SJR Factor
1.046
CiteScore
Q1
Rank Cat.
37/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
6.7
SNIP
1.114
13.- IMPACT OF NONHOMOEPITAXIAL DEFECTS IN DEPLETED DIAMOND MOS CAPACITORS 2018 - IEEE Transactions on Electron Devices, Vol.65, Issue 5, pp 1830-1837
Pham, T.T.; Piñero, J.C.; Marechal, A.; Gutierrez, M.; Lloret, F.; Eon, D.; Gheeraert, E.; Rouger, N.; Araújo, D.; Pernot, J.;
JCR Factor
2.704
JCR
Q2
Rank Cat.
52/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
65.203
SJR Factor
0.853
CiteScore
Q1
Rank Cat.
123/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
5
SNIP
1.453
14.- GaSb AND GaSb/AlSb SUPERLATTICE BUFFER LAYERS FOR HIGH-QUALITY PHOTODIODES GROWN ON COMMERCIAL GaAs AND Si SUBSTRATES 2018 - Journal of Electronic Materials, Vol.47, Issue 9, pp 5083-5086
Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H.Y.; Araújo, D.;
JCR Factor
1.676
JCR
Q3
Rank Cat.
85/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
42.905
SJR Factor
0.422
CiteScore
Q2
Rank Cat.
267/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
2.5
SNIP
0.724
15.- CRYSTALLINE DEFECTS INDUCED DURING MPCVD LATERAL HOMOEPITAXIAL DIAMOND GROWTH 2018 - Nanomaterials, Vol.8, Issue 10, pp 814[1]-814[10]
Lloret, F.; Eon, D.; Bustarret, E.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8100814
16.- CONTROL OF THE ALUMINA MICROSTRUCTURE TO REDUCE GATE LEAKS IN DIAMOND MOSFETS 2018 - Nanomaterials, Vol.8, Issue 8, pp 584[1]-584[8]
Gutiérrez, M.; Lloret, F.; Pham, T.T.; Cañas, J.; Reyes, D.F.; Eon, D.; Pernot, J.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8080584
17.- BORON-DOPING PROXIMITY EFFECTS ON DISLOCATION GENERATION DURING NON-PLANAR MPCVD HOMOEPITAXIAL DIAMOND GROWTH 2018 - Nanomaterials, Vol.8, Issue 7, pp 480[1]-480[7]
Lloret, F.; Eon, D.; Bustarret, E.; Fiori, A.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8070480
18.- MPCVD DIAMOND LATERAL GROWTH THROUGH MICROTERRACES TO REDUCE THREADING DISLOCATIONS DENSITY 2017 - Physica Status Solidi (A) Applications and Materials Science, Vol.214, Issue 11, pp 1700242[1]-1700242[5]
Lloret, F.; Gutierrez, M.; Araújo, D.; Eon, D.; Bustarret, E.;
JCR Factor
1.795
JCR
Q2
Rank Cat.
71/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
51.712
SJR Factor
0.648
CiteScore
Q2
Rank Cat.
31/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
3.3
SNIP
0.762
Proyectos activos durante el periodo 2017 - 2021.
1.- VOLAR CON DIAMANTES: ESTRUCTURAS AEROESPACIALES CFRP CONDUCTORAS ELÉCTRICAS Y TÉRMICAS
Ref. P20-00946, Programa: Plan Andaluz de Investigación
Organismo: CONSEJERIA DE ECONOMIA, CONOCIMIENTO, EMPRESAS Y UNIVERSIDADES Fecha inicio: 2021-10-06 Fecha fin: 2022-12-31
Importe concedido: 100.000,00€ Participantes: 6
Rol: Participante
Organismo: CONSEJERIA DE ECONOMIA, CONOCIMIENTO, EMPRESAS Y UNIVERSIDADES Fecha inicio: 2021-10-06 Fecha fin: 2022-12-31
Importe concedido: 100.000,00€ Participantes: 6
Rol: Participante
2.- NUEVOS CONFIGURACIONES DE PUERTAS PARA MISFETS DE DIAMANTE CON CANAL OPTO-ACTIVADO :CRECIMIENTO Y CARACTERIZACIÓN
Ref. PID2020-117201RB-C21, Programa: Plan Nacional I+D+i
Organismo: MINISTERIO DE CIENCIA E INNOVACIÓN Fecha inicio: 2021-09-01 Fecha fin: 2024-08-31
Importe concedido: 228.932,00€ Participantes: 6
Rol: Participante
Organismo: MINISTERIO DE CIENCIA E INNOVACIÓN Fecha inicio: 2021-09-01 Fecha fin: 2024-08-31
Importe concedido: 228.932,00€ Participantes: 6
Rol: Participante
3.- COMPOSITE DE FIBRA DE CARBONO (CFRP) CONDUCTOR TÉRMICO Y ELÉCTRICO POR PERCOLACIÓN DE NANO-DIAMANTES (CARBO-DIAM)
Ref. FEDER-UCA18-107851, Programa: Plan Andaluz de Investigación
Organismo: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Fecha inicio: 2020-04-01 Fecha fin: 2023-03-31
Importe concedido: 152.500,00€ Participantes: 4
Rol: Investigador Principal
Organismo: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Fecha inicio: 2020-04-01 Fecha fin: 2023-03-31
Importe concedido: 152.500,00€ Participantes: 4
Rol: Investigador Principal
Contratos activos durante el periodo 2017 - 2021.
No existen registros para el periodo citado.Patentes registradas por el autor
1.- TRANSISTOR METAL-AISLANTE-SEMICONDUCTOR DE EFECTO CAMPO (MISFET) DE DIAMANTE PARA ALTA POTENCIA CON CANAL OPTO-ACTIVADO
Autores: LLORET VIEIRA, FERNANDO MANUEL; ARAUJO GAY, DANIEL
Ref. P201831162 Fecha Solicitud: 2021-05-31
Licenciada: NO Rol: Solicitante
Área: FISICA APLICADA
Ref. P201831162 Fecha Solicitud: 2021-05-31
Licenciada: NO Rol: Solicitante
Área: FISICA APLICADA
2.- TRANSISTOR DE EFECTO CAMPO (MOSFET) Y PROCEDIMIENTO DE FABRICACIÓN DEL MISMO.
Autores: ARAÚJO GAY, DANIEL; LLORET VIEIRA, FERNANDO
Ref. P201831162 Fecha Solicitud: 2018-11-29
Licenciada: NO Rol: Autor
Área: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Ref. P201831162 Fecha Solicitud: 2018-11-29
Licenciada: NO Rol: Autor
Área: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Software desarrollados
No existen registros para el periodo citado.Tesis tutorizadas
No existen registros para el periodo citado.
Overview