Institution

 Technical University of Madrid

Current Position

Full Professor

Department

 Electronic Engineering

ORCID

0000-0002-3686-8982

Scopus-ID

7005101634

H-Index

41

JCR Articles

335

Total Citations

5928

• A. Bengoechea-Encabo, S. Albert, M.A. Sanchez-Garcia, L.L. López, S. Estradé, J.M. Rebled, F. Peiró, G. Nataf, G. De Mierry, J. Zuniga-Perez, E. Calleja. “Selective area growth of a- and c-plane GaN nanocolumns by molecular beam epitaxy using colloidal nanolithography” J. Cryst. Growth 353 (2012), 1-4.
• S. Albert, A. Bengoechea-Encabo, X. Kong, M.A. Sanchez-Garcia, E. Calleja, A. Trampert. “Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns” Appl. Phys. Lett. 102 (2013), 181103.
• S. Albert, A. Bengoechea-Encabo, M.A. Sánchez-García, X. Kong, A. Trampert, E. Calleja. “Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): From ultraviolet to infrared emission” Nanotechnology 24 (2013), 175303.
• S. Fernández-Garrido, V.M. Kaganer, K.K. Sabelfeld, T. Gotschke, J. Grandal, E. Calleja, L. Geelhaar, O. Brandt. “Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy” Nano Lett. 13 (2013), 3274-3280.
• S. Albert, A. Bengoechea-Encabo, M. Sabido-Siller, M. Müller, G. Schmidt, S. Metzner, P. Veit, F. Bertram, M.A. Sánchez-García, J. Christen, E. Calleja. “Growth of InGaN/GaN core-shell structures on selectively etched GaN rods by molecular beam epitaxy” J. Cryst. Growth 392 (2014), 5-10.
• P. Aseev, P.E.D. Soto, V.J. Gómez-Hernández, P. Kumar, N. H. Alavi, J. M. Delgado, F.M. Morales, J.J. Jiménez, R. García, A. Senichev, C. Lienau, E. Calleja, R. Nötzel. “Near-infrared Emitting In-rich InGaN Layers Grown Directly on Si: Towards the Whole Composition Range” Appl. Phys. Lett. 106 (2015), 072102.
• S. Albert, A. Bengoechea-Encabo, J. Ledig, T. Schimpke, M.A. Sánchez-García, M. Strassburg, A. Waag, E. Calleja. “Demonstration of (In, Ga)N/GaN Core−Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars”, Cryst. Growth Des. 15 (2015), 3661.
• E. Chernysheva, Ž. Gačević, N. García-Lepetit, H.P. Van Muelen, E. Calleja, J.M. Calleja, S. Lazić. “Dynamic control of optical emission from GaN/InGaN nanowire quantum dots by surface acoustic waves”, AIP Adv. 5 (2015), 097217.
• X. Kong, H. Li, S. Alabert, A. Bengoechea, M.A. Sánchez-García, E. Calleja, C. Draxl, A. Trampert. “Titanium induced polarity inversion in ordered (In,Ga)N/GaN nanocolumns” Nanotechnology 27 (2016), 065705.
• Ž. Gačević, D. López-Romero, T. Juan Mangas, E. Calleja. “A top-gate GaN nanowire MESFET with improved channel electrostatic control” Appl. Phys. Lett. 108 (2016), 033101.

• FP7-NMP-2008-LARGE-2, CP-IP228999-2: “Smart Nanostructured Semiconductors for Energy-Saving Light Solutions (SMASH)”. Duration: 2009-2012. P.I: Enrique Calleja Pardo.
• MAT2015-65120-R: “Crecimiento por epitaxia de haces moleculares de capas finas y nanoestructuras ordenadas de InGaN para dispositivos fotovoltaicos, sensores y generadores de hidrógeno”. Duration: 2016-2018. P.I: Enrique Calleja Pardo.
• FP7-NMP-2011-SMALL-5, NMP-2011-2.2-3. Nº 280694-2: “3D GaN for High Efficiency Solid State Lighting (GECCO)”. Duration: 2012-2014. P.I: Enrique Calleja Pardo.
• P2009/ESP-1503: “Nanodispositivos eficientes de luz clásica y cuántica (Q&CLight)”. Duration: 2010-2014. P.I: Enrique Calleja Pardo.
• MAT2008-04815: “Desarrollo de Micro y Nanocavidades incluyendo regiones activas de Puntos Cuánticos de Nitruros-III: Aplicaciones a emisores de luz en azul y UV (QUADONIC)”. Duration: 2009-2011. P.I: Enrique Calleja Pardo.
• PLE2009-0023: “High efficiency InGaN heterojunction Solar Cells grown by MBE”. Duration: 2009-2012. P.I: Enrique Calleja Pardo.
• F08-00-01: “Desarrollo de las actividades para la deposición con láminas III-V sobre substratos semiconductores en colaboración con Abengoa Research S.L. (referencia: Prometheus)”. Entity: Abengoa Research S.L. Duration: 2013-2014. P.I: Enrique Calleja Pardo.

• Patent nº 12151946.6-1564: “Light-emitting diode chip”. Inventors: Martin Strassburg, Enrique Calleja, Steven Albert, Ana María Bengoechea, Miguel Ángel Sánchez- García, Martin Mandl, Christopher Kölper. Year of registration: 2012. Country: Germany. Entity: OSRAM Opto Semiconductors GmbH.

• Director of the Institute of Optoelectronic Systems and MIcrotechnology (ISOM). (Since May 2008 to May 2016).
• Visiting fellow of the LAAS, Toulouse, France (1975-76, 1980, 1985).
• Fellow of the “Juan March Foundation”, Spain (1976-1977).
• Fellow of the CSIC, Spain (1978-1981).

• Award to the Research of the General Foundation of the Technical University of Madrid, 1998.