Member Profile
Last articles published
1.- SUPPRESSING THE EFFECT OF THE WETTING LAYER THROUGH ALAS CAPPING IN INAS/GAAS QD STRUCTURES FOR SOLAR CELLS APPLICATIONS 2022 - Nanomaterials, Vol.12, Issue 8, pp -
2.- EFFECT OF THE ALAS CAPPING LAYER THICKNESS ON THE STRUCTURE OF INAS/GaAs QD 2022 - Applied Surface Science, Vol.573, Issue -, pp 151572(1)-151572(11)
Articles published during the period 2017 - 2021.
1.- EVALUATION OF DIFFERENT CAPPING STRATEGIES IN THE INAS/GAAS QD SYSTEM: COMPOSITION, SIZE AND QD DENSITY FEATURES 2021 - Applied Surface Science, Vol.537, Issue -, pp -
2.- ROLE OF SB ON THE VERTICAL-ALIGNMENT OF TYPE-II STRAIN-COUPLED INAS/GAASSB MULTI QUANTUM DOTS STRUCTURES 2020 - Journal of Alloys and Compounds, Vol.832, Issue 8:2020, pp 154914[1]-154914[7]
3.- DILUTED NITRIDE TYPE-II SUPERLATTICES: OVERCOMING THE DIFFICULTIES OF BULK GaAsSbN IN SOLAR CELLS 2020 - Solar Energy Materials and Solar Cells, Vol.210, Issue 6:2020, pp 110500[1]-110500[8]
4.- CDRIFT: AN ALGORITHM TO CORRECT LINEAR DRIFT FROM A SINGLE HIGH-RESOLUTION STEM IMAGE 2020 - Microscopy and Microanalysis, Vol.26, Issue 5, pp 913-920
5.- FORMATION MECHANISMS OF AGGLOMERATIONS IN HIGH-DENSITY InAs/GaAs QUANTUM DOT MULTI-LAYER STRUCTURES 2020 - Applied Surface Science, Vol.508, Issue 4:2020, pp 145218[1]-145218[7]
6.- TOPOLOGICAL HOMOGENEITY FOR ELECTRON MICROSCOPY IMAGES
2019 - Lecture Notes in Computer Science, Vol.11382
, Issue -, pp 166-178
7.- OPEN CIRCUIT VOLTAGE RECOVERY IN GaAsSbN-BASED SOLAR CELLS: ROLE OF DEEP N-RELATED RADIATIVE STATES 2019 - Solar Energy Materials and Solar Cells, Vol.200, Issue -, pp 109949[1]-109949[9]
8.- MODELLING OF BISMUTH SEGREGATION IN InAsBi/InAs SUPERLATTICES: DETERMINATION OF THE EXCHANGE ENERGIES 2019 - Applied Surface Science, Vol.485, Issue -, pp 29-34
9.- NITROGEN MAPPING FROM ADF IMAGING ANALYSIS IN QUATERNARY DILUTE NITRIDE SUPERLATTICES 2019 - Applied Surface Science, Vol.475, Issue -, pp 473-478
10.- CONTROL OF NITROGEN INHOMOGENEITIES IN TYPE-I AND TYPE-II GaAsSbN SUPERLATTICES FOR SOLAR CELL DEVICES 2019 - Nanomaterials, Vol.9, Issue 4, pp 623[1]-623[9]
11.- EFFECT OF CAPPING RATE ON INAS/GAAS QUANTUM DOT SOLAR CELLS
2019 - Proceedings of SPIE - The International Society for Optical Engineering, Vol.10913
, Issue -, pp 1091312[1]-1091312[6]
12.- COMPOSITIONAL INHOMOGENEITIES IN TYPE-I AND TYPE-II SUPERLATTICES FOR GaAsSbN-BASED SOLAR CELLS: EFFECT OF THERMAL ANNEALING 2018 - Applied Surface Science, Vol.459, Issue -, pp 1-8
13.- SIZE AND SHAPE TUNABILITY OF SELF-ASSEMBLED InAs/GaAs NANOSTRUCTURES THROUGH THE CAPPING RATE 2018 - Applied Surface Science, Vol.444, Issue -, pp 260-266
14.- MODELLING OF THE Sb AND N DISTRIBUTION IN TYPE II GaAsSb/GaAsN SUPERLATTICES FOR SOLAR CELL APPLICATIONS 2018 - Applied Surface Science, Vol.442, Issue -, pp 664-672
15.- CORRECTING SAMPLE DRIFT USING FOURIER HARMONICS 2018 - Micron, Vol.110, Issue -, pp 18-27
16.- GaAsN/GaAsSb SUPERLATTICES AS 1 EV LAYERS FOR EFFICIENT MULTI-JUNCTION SOLAR CELLS 2018 - 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Vol.-, Issue 8548015, pp 3463-3467
17.- Sb AND N INCORPORATION INTERPLAY IN GaAsSbN/GaAs EPILAYERS NEAR LATTICE-MATCHING CONDITION FOR 1.0–1.16-eV PHOTONIC APPLICATIONS 2017 - Nanoscale Research Letters, Vol.12, Issue -, pp 356[1]-356[10]
18.- QUANTITATIVE ANALYSIS OF THE INTERPLAY BETWEEN InAs QUANTUM DOTS AND WETTING LAYER DURING THE GaAs CAPPING PROCESS 2017 - Nanotechnology, Vol.28, Issue 42, pp 425702
19.- STRAIN-BALANCED TYPE-II SUPERLATTICES FOR EFFICIENT MULTI-JUNCTION SOLAR CELLS 2017 - Scientific Reports, Vol.7, Issue 1, pp 4012[1]-4012[10]
20.- THIN GaAsSb CAPPING LAYERS FOR IMPROVED PERFORMANCE OF InAs/GaAs QUANTUM DOT SOLAR CELLS 2017 - Solar Energy Materials and Solar Cells, Vol.159, Issue -, pp 282-289
21.- EVALUATION OF HIGH-QUALITY IMAGE RECONSTRUCTION TECHNIQUES APPLIED TO HIGH-RESOLUTION Z-CONTRAST IMAGING 2017 - Ultramicroscopy, Vol.182, Issue -, pp 283-291
Projects active during the period 2017 - 2021.
1.- ANTIMÓNIUROS CUÁNTICOS PARA FOTÓNICA CUÁNTICA Y FOTOVOLTAICA: NANOANALISIS ESTRUCTURAL
Organization: MINISTERIO DE CIENCIA, INNOVACIÓN Y UNIVERSIDADES Start date: 2020-06-01 End Date: 2023-05-31
Grant: 67.154,50€ Participants: 3
Role: Investigador Principal
2.- CONTRIBUCIÓN AL DESARROLLO DE ALEACIONES SEMICONDUCTORAS (AL)GAASSB(N) Y BI-III-V PARA APLICACIONES FOTOVOLTAICAS DE ALTA EFICIENCIA: IMPLEMENTACIÓN DE METODOLOGÍAS AVANZADAS DE CARACTERIZACIÓN
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2022-03-31
Grant: 24.766,00€ Participants: 3
Role: Participante
3.- NUEVAS ARQUITECTURAS BASADAS EN NANOESTRUCTURAS CON Sb PARA APLICACIONES FOTOVOLTAICAS DE ALTA EFICIENCIA.
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2017-01-01 End Date: 2019-12-29
Grant: 90.750,00€ Participants: 5
Role: Investigador Principal
Contracts active during the period 2017 - 2021.
There are no records for the period cited.Patents registered
There are no records for the period cited.Software developed
There are no records for the period cited.Theses
1.- CHARACTERIZATION OF NOVEL SB‐NANOSTRUCTURES BY TRANSMISSION ELECTRON MICROSCOPY TECHNIQUES FOR HIGH EFFICIENT SOLAR CELLS.
PhD Student: RUIZ MARÍN, NAZARET Lecture Date: 02/03/2021
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
2.- CARACTERIZACIÓN DE NANOESTRUCTURAS DE ALEACIONES EMERGENTES DE GaAs(Sb)(N) PARA APLICACIONES FOTOVOLTAICAS Y DE FOTODETECCIÓN POR TÉCNICAS DE MICROSCOPÍA ELECTRÓNICA
PhD Student: BRAZA BLANCO, VERÓNICA Lecture Date: 05/04/2019
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
3.- CARACTERIZACIÓN Y EVALUACIÓN MEDIANTE TÉCNICAS DE MICROSCOPÍA ELECTRÓNICA DE NANOHILOS SEMICONDUCTORES PARA APLICACIONES EN OPTO-ELECTRÓNICA
PhD Student: FATH ALLAH, RABIE Lecture Date: 30/04/2015
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: No
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
4.- EFECTO DE LA INCORPORACIÓN DE ELEMENTOS DEL GRUPO V DILUIDOS EN NANOESTRUCTURAS AUTOENSAMBLADAS DE SEMICONDUCTORES III-V
PhD Student: FERNÁNDEZ DE LOS REYES, DANIEL Lecture Date: 11/07/2014
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA