Member Profile
Marina Gutiérrez Peinado
Associate Professor (tenured)
Materials Science and Engineering
Materials Science and Metallurgical Engineering
Associate Professor (tenured) Materials Science and Engineering Materials Science and Metallurgical Engineering 
Articles published during the period 2017 - 2021.
1.- DIAMOND/Γ-ALUMINA BAND OFFSET DETERMINATION BY XPS 2021 - Applied Surface Science, Vol.535, Issue 1, pp 146301[1]-146301[8]
Cañas, J.; Alba, G.; Leinen, D.; Lloret, F.; Gutierrez, M.; Eon, D.; Pernot, J.; Gheeraert, E.; Araújo, D.;
JCR Factor
6.707
JCR
Q1
Rank Cat.
1/21
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.619
SJR Factor
1.295
CiteScore
Q1
Rank Cat.
23/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
10.7
SNIP
1.382
2.- STUDY OF EARLY STAGES IN THE GROWTH OF BORON-DOPED DIAMOND ON CARBON FIBERS 2021 - Physica Status Solidi (A) Applications and Materials Science, Vol.218, Issue 5, pp 1-6
Millán-Barba, J.; Gutiérrez, M.; Lloret, F.; de Villoria, R.G.; Alcántara, R.; Haenen, K.; Araújo, D.;
JCR Factor
1.981
JCR
Q3
Rank Cat.
100/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
37.812
SJR Factor
0.532
CiteScore
Q2
Rank Cat.
106/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.4
SNIP
0.695
3.- INTERFACIAL INTEGRITY ENHANCEMENT OF ATOMIC LAYER DEPOSITED ALUMINA ON BORON DOPED DIAMOND BY SURFACE PLASMA FUNCTIONALIZATION 2020 - Surface and Coatings Technology, Vol.397, Issue 9:2020, pp 125991[1]-125991[11]
Jaggernauth, A.; Silva, R.M.; Neto, M.A.; Oliveira, F.J.; Bdikin, I.K.; Alegre, M.P.; Gutiérrez, M.; Araújo, D.; Mendes, J.C.; Silva, R.F.;
JCR Factor
4.158
JCR
Q1
Rank Cat.
40/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
75.312
SJR Factor
0.904
CiteScore
Q1
Rank Cat.
37/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
6.6
SNIP
1.38
4.- IMPROVED FIELD ELECTRON EMISSION PROPERTIES OF PHOSPHORUS AND NITROGEN CO-DOPED NANOCRYSTALLINE DIAMOND FILMS 2020 - Nanomaterials, Vol.10, Issue 6, pp 1024[1]-1024[11]
Lloret, F.; Sankaran, K.J.; Millan-Barba, J.; Desta, D.; Rouzbahani, R.; Pobedinskas, P.; Gutierrez, M.; Boyen, H.G.; Haenen, K.;
JCR Factor
5.076
JCR
Q1
Rank Cat.
35/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
78.438
SJR Factor
0.919
CiteScore
Q1
Rank Cat.
58/279
Cat. ASJC
CHEMICAL ENGINEERING (ALL)
CiteScore
5.4
SNIP
1.129
DOI: 10.3390/nano10061024
5.- ANALYSIS BY HR-STEM OF THE STRAIN GENERATION IN INP AFTER SIN X DEPOSITION AND ICP ETCHING 2020 - Journal of Electronic Materials, Vol.49, Issue 59, pp 5226-5231
Gutiérrez, M.; Reyes, D.F.; Araújo, D.; Landesman, J.P.; Pargon, E.;
JCR Factor
1.938
JCR
Q3
Rank Cat.
102/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
36.562
SJR Factor
0.422
CiteScore
Q2
Rank Cat.
108/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.3
SNIP
0.646
6.- HOW TO GROW FULLY (100) ORIENTED SiC/Si/SiC/Si MULTI-STACK 2019 - Physica Status Solidi (A) Applications and Materials Science, Vol.216, Issue 10, pp 1800588[1]-1800588[10]
Yeghoyan, T.; Alassaad, K.; Soulière, V.; Ferro, G.; Gutierrez, M.; Araújo, D.;
JCR Factor
1.759
JCR
Q3
Rank Cat.
94/154
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
39.286
SJR Factor
0.527
CiteScore
Q2
Rank Cat.
101/287
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.1
SNIP
0.728
7.- HIGH QUALITY Al₂O₃/(100) OXYGEN-TERMINATED DIAMOND INTERFACE FOR MOSFETS FABRICATION 2018 - Applied Physics Letters, Vol.112, Issue 10, pp 102103
Pham, T.T.; Gutiérrez, M.; Masante, C.; Rouger, N.; Eon, D.; Gheeraert, E.; Araùjo, D.; Pernot, J.;
JCR Factor
3.521
JCR
Q1
Rank Cat.
31/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
79.392
SJR Factor
1.331
CiteScore
Q1
Rank Cat.
5/49
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.7
SNIP
1.227
DOI: 10.1063/1.5018403
8.- IMPACT OF NONHOMOEPITAXIAL DEFECTS IN DEPLETED DIAMOND MOS CAPACITORS 2018 - IEEE Transactions on Electron Devices, Vol.65, Issue 5, pp 1830-1837
Pham, T.T.; Piñero, J.C.; Marechal, A.; Gutierrez, M.; Lloret, F.; Eon, D.; Gheeraert, E.; Rouger, N.; Araújo, D.; Pernot, J.;
JCR Factor
2.704
JCR
Q2
Rank Cat.
52/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
65.203
SJR Factor
0.853
CiteScore
Q1
Rank Cat.
123/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
5
SNIP
1.453
9.- DIRECT GROWTH OF InAs/GaSb TYPE II SUPERLATTICE PHOTODIODES ON SILICON SUBSTRATES 2018 - IET Optoelectronics, Vol.12, Issue 1, pp 2-4
Burguete, C.G.; Guo, D.; Jurczak, P.; Cui, F.; Tang, M.; Chen, W.; Deng, Z.; Chen, Y.; Gutiérrez, M.; Chen, B.; Liu, H.; Wu, J.;
JCR Factor
1.667
JCR
Q3
Rank Cat.
57/95
Cat. JCR
OPTICS
Percentile JCR
40.526
SJR Factor
0.405
CiteScore
Q2
Rank Cat.
228/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
3
SNIP
0.791
10.- GaSb AND GaSb/AlSb SUPERLATTICE BUFFER LAYERS FOR HIGH-QUALITY PHOTODIODES GROWN ON COMMERCIAL GaAs AND Si SUBSTRATES 2018 - Journal of Electronic Materials, Vol.47, Issue 9, pp 5083-5086
Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H.Y.; Araújo, D.;
JCR Factor
1.676
JCR
Q3
Rank Cat.
85/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
42.905
SJR Factor
0.422
CiteScore
Q2
Rank Cat.
267/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
2.5
SNIP
0.724
11.- CONTROL OF THE ALUMINA MICROSTRUCTURE TO REDUCE GATE LEAKS IN DIAMOND MOSFETS 2018 - Nanomaterials, Vol.8, Issue 8, pp 584[1]-584[8]
Gutiérrez, M.; Lloret, F.; Pham, T.T.; Cañas, J.; Reyes, D.F.; Eon, D.; Pernot, J.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8080584
12.- SILICON (001) HETEROEPITAXY ON 3C-SiC(001)/Si(001) SEED 2018 - Materials Science Forum, Vol.924 MSF, Issue -, pp 128-131
Yeghoyan, T.; Alassaad, K.; McMitchell, S.R.C.; Gutierrez, M.; Souliere, V.; Araújo, D.; Ferro, G.;
JCR Factor
-
JCR
-
Rank Cat.
-/-
Cat. JCR
-
Percentile JCR
-
SJR Factor
0.173
CiteScore
Q4
Rank Cat.
465/587
Cat. ASJC
MECHANICAL ENGINEERING
CiteScore
0.5
SNIP
0.314
13.- SOLID SOLUTION STRENGTHENING IN GaSb/GaAs: A MODE TO REDUCE THE TD DENSITY THROUGH BE-DOPING 2017 - Applied Physics Letters, Vol.110, Issue 9, pp 092103[1]-092103[4]
Gutiérrez, M.; Araújo, D.; Jurczak, P.; Wu, J.; Liu, H.;
JCR Factor
3.495
JCR
Q1
Rank Cat.
29/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
80.479
SJR Factor
1.382
CiteScore
Q1
Rank Cat.
4/43
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.9
SNIP
1.244
DOI: 10.1063/1.4977489
14.- TWINS AND STRAIN RELAXATION IN ZINC-BLENDE GaAs NANOWIRES GROWN ON SILICON 2017 - Applied Surface Science, Vol.395, Issue -, pp 195-199
Piñero, J.C.; Araújo, D.; Pastore, C.E.; Gutierrez, M.; Frigeri, C.; Benali, A.; Lelièvre, J.F.; Gendry, M.;
JCR Factor
4.439
JCR
Q1
Rank Cat.
1/19
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.368
SJR Factor
1.093
CiteScore
Q1
Rank Cat.
11/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
6.7
SNIP
1.328
15.- 2.5-µm InGaAs PHOTODIODES GROWN ON GaAs SUBSTRATES BY INTERFACIAL MISFIT ARRAY TECHNIQUE 2017 - Infrared Physics and Technology, Vol.81, Issue -, pp 320-324
Jurczak, P.; Sablon, K.A.; Gutiérrez, M.; Liu, H.; Wu, J.;
JCR Factor
1.851
JCR
Q2
Rank Cat.
68/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
53.767
SJR Factor
0.54
CiteScore
Q2
Rank Cat.
75/225
Cat. ASJC
ELECTRONIC, OPTICAL AND MAGNETIC MATERIALS
CiteScore
3.4
SNIP
1.16
16.- PROTON RADIATION EFFECT ON InAs AVALANCHE PHOTODIODES 2017 - Optics Express, Vol.25, Issue 3, pp 2818-2825
Zhou, X.; White, B.; Meng, X.; Zhang, S.; Gutierrez, M.; Robbins, M.; Rojas, L.G.; Nelms ,N.; Tan, C.H.; Ng, J.S.;
JCR Factor
3.356
JCR
Q1
Rank Cat.
19/94
Cat. JCR
OPTICS
Percentile JCR
80.319
SJR Factor
1.519
CiteScore
Q1
Rank Cat.
17/170
Cat. ASJC
ATOMIC AND MOLECULAR PHYSICS, AND OPTICS
CiteScore
6.7
SNIP
1.562
DOI: 10.1364/OE.25.002818
17.- MPCVD DIAMOND LATERAL GROWTH THROUGH MICROTERRACES TO REDUCE THREADING DISLOCATIONS DENSITY 2017 - Physica Status Solidi (A) Applications and Materials Science, Vol.214, Issue 11, pp 1700242[1]-1700242[5]
Lloret, F.; Gutierrez, M.; Araújo, D.; Eon, D.; Bustarret, E.;
JCR Factor
1.795
JCR
Q2
Rank Cat.
71/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
51.712
SJR Factor
0.648
CiteScore
Q2
Rank Cat.
31/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
3.3
SNIP
0.762
Projects active during the period 2017 - 2021.
1.- VOLAR CON DIAMANTES: ESTRUCTURAS AEROESPACIALES CFRP CONDUCTORAS ELÉCTRICAS Y TÉRMICAS
Ref. P20-00946, Program: Plan Andaluz de Investigación
Organization: CONSEJERIA DE ECONOMIA, CONOCIMIENTO, EMPRESAS Y UNIVERSIDADES Start date: 2021-10-06 End Date: 2022-12-31
Grant: 100.000,00€ Participants: 6
Role: Participante
Organization: CONSEJERIA DE ECONOMIA, CONOCIMIENTO, EMPRESAS Y UNIVERSIDADES Start date: 2021-10-06 End Date: 2022-12-31
Grant: 100.000,00€ Participants: 6
Role: Participante
2.- RECUPERACIÓN ENERGETICA DE LAS VIBRACIONES DE ALAS DE AERONAVES A TRAVÉS DE SISTEMAS PIEZOELÉCTRICOS BASADOS EN DIAMANTES
Ref. PID2019-110219RB-I00, Program: Plan Nacional I+D+i
Organization: MINISTERIO DE CIENCIA, INNOVACIÓN Y UNIVERSIDADES Start date: 2020-06-01 End Date: 2023-05-31
Grant: 90.750,00€ Participants: 5
Role: Investigador Principal
Organization: MINISTERIO DE CIENCIA, INNOVACIÓN Y UNIVERSIDADES Start date: 2020-06-01 End Date: 2023-05-31
Grant: 90.750,00€ Participants: 5
Role: Investigador Principal
3.- COMPOSITE DE FIBRA DE CARBONO (CFRP) CONDUCTOR TÉRMICO Y ELÉCTRICO POR PERCOLACIÓN DE NANO-DIAMANTES (CARBO-DIAM)
Ref. FEDER-UCA18-107851, Program: Plan Andaluz de Investigación
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2023-03-31
Grant: 152.500,00€ Participants: 4
Role: Participante
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2023-03-31
Grant: 152.500,00€ Participants: 4
Role: Participante
4.- FIBRAS DE CARBONO RECUBIERTAS DE DIAMANTE, ¿LA NUEVA GENERACIÓN DE COMPOSITES (CFRP)?.
Ref. ESP2017-91820-EXP, Program: Plan Nacional I+D+i
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2018-11-01 End Date: 2020-10-31
Grant: 48.400,00€ Participants: 1
Role: Investigador Principal
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2018-11-01 End Date: 2020-10-31
Grant: 48.400,00€ Participants: 1
Role: Investigador Principal
5.- GREEN ELECTRONICS WITH DIAMOND POWER DEVICES
Ref. 640947, Program: Programas Europeos
Organization: UNIÓN EUROPEA Start date: 2015-05-01 End Date: 2019-04-30
Grant: 220.000,00€ Participants: 6
Role: Participante
Organization: UNIÓN EUROPEA Start date: 2015-05-01 End Date: 2019-04-30
Grant: 220.000,00€ Participants: 6
Role: Participante
6.- DISPOSITIVO DE ALTO VOLTAJE PARA ELECTRÓNICA DE POTENCIA VERDE: RELACIÓN NANOESTRUCTURA-FUNCIÓN.
Ref. TEC2014-54357-C2-2-R, Program: Plan Nacional I+D+i
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2015-01-01 End Date: 2017-12-31
Grant: 150.645,00€ Participants: 6
Role: Participante
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2015-01-01 End Date: 2017-12-31
Grant: 150.645,00€ Participants: 6
Role: Participante
Contracts active during the period 2017 - 2021.
There are no records for the period cited.Patents registered
There are no records for the period cited.Software developed
There are no records for the period cited.Theses
There are no records for the period cited.
Overview