Member Profile
Daniel Araújo Gay
Full Professor
Materials Science and Engineering
Materials Science and Metallurgical Engineering
Full Professor Materials Science and Engineering Materials Science and Metallurgical Engineering 
Articles published during the period 2017 - 2021.
1.- DIAMOND/Γ-ALUMINA BAND OFFSET DETERMINATION BY XPS 2021 - Applied Surface Science, Vol.535, Issue 1, pp 146301[1]-146301[8]
Cañas, J.; Alba, G.; Leinen, D.; Lloret, F.; Gutierrez, M.; Eon, D.; Pernot, J.; Gheeraert, E.; Araújo, D.;
JCR Factor
6.707
JCR
Q1
Rank Cat.
1/21
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.619
SJR Factor
1.295
CiteScore
Q1
Rank Cat.
23/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
10.7
SNIP
1.382
2.- STUDY OF EARLY STAGES IN THE GROWTH OF BORON-DOPED DIAMOND ON CARBON FIBERS 2021 - Physica Status Solidi (A) Applications and Materials Science, Vol.218, Issue 5, pp 1-6
Millán-Barba, J.; Gutiérrez, M.; Lloret, F.; de Villoria, R.G.; Alcántara, R.; Haenen, K.; Araújo, D.;
JCR Factor
1.981
JCR
Q3
Rank Cat.
100/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
37.812
SJR Factor
0.532
CiteScore
Q2
Rank Cat.
106/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.4
SNIP
0.695
3.- IMPACT OF METHANE CONCENTRATION ON SURFACE MORPHOLOGY AND BORON INCORPORATION OF HEAVILY BORON-DOPED SINGLE CRYSTAL DIAMOND LAYERS 2021 - Carbon, Vol.172, Issue -, pp 463-473
Rouzbahani, R.; Nicley, S.S.; Vanpoucke, D.E.P.; Lloret, F.; Pobedinskas, P.; Araújo, D.; Haenen, K.;
JCR Factor
9.594
JCR
Q1
Rank Cat.
42/335
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
87.612
SJR Factor
2.25
CiteScore
Q1
Rank Cat.
21/455
Cat. ASJC
MATERIALS SCIENCE (ALL)
CiteScore
15.7
SNIP
1.723
4.- COMPREHENSIVE NANOSCOPIC ANALYSIS OF TUNGSTEN CARBIDE/OXYGENATED-DIAMOND CONTACTS FOR SCHOTTKY BARRIER DIODES 2021 - Applied Surface Science, Vol.537, Issue -, pp -
Alba, G.; Leinen, D.; Villar, M.P.; Alcántara, R.; Piñero, J.C.; Fiori, A.; Teraji, T.; Araújo, D.;
JCR Factor
6.707
JCR
Q1
Rank Cat.
1/21
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.619
SJR Factor
1.295
CiteScore
Q1
Rank Cat.
23/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
10.7
SNIP
1.382
5.- DISLOCATION GENERATION MECHANISMS IN HEAVILY BORON-DOPED DIAMOND EPILAYERS 2021 - Applied Physics Letters, Vol.118, Issue 5, pp -
Araujo, D.; Lloret, F.; Alba, G.; Alegre, M.P.; Villar, M.P.;
JCR Factor
3.791
JCR
Q2
Rank Cat.
47/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
70.938
SJR Factor
1.182
CiteScore
Q1
Rank Cat.
6/58
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.9
SNIP
1.142
DOI: 10.1063/5.0031476
6.- SELECTIVELY BORON DOPED HOMOEPITAXIAL DIAMOND GROWTH FOR POWER DEVICE APPLICATIONS 2021 - Applied Physics Letters, Vol.118, Issue 2, pp -
Lloret, F.; Eon, D.; Bustarret, E.; Donatini, F.; Araujo, D.;
JCR Factor
3.791
JCR
Q2
Rank Cat.
47/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
70.938
SJR Factor
1.182
CiteScore
Q1
Rank Cat.
6/58
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.9
SNIP
1.142
DOI: 10.1063/5.0031478
7.- DIAMOND FOR ELECTRONICS: MATERIALS, PROCESSING AND DEVICES 2021 - Materials, Vol.14, Issue 22, pp 7081(1)-7081(25)
Araujo, D.; Suzuki, M.; Lloret, F.; Alba, G.; Villar, P.;
JCR Factor
3.623
JCR
Q1
Rank Cat.
17/80
Cat. JCR
METALLURGY & METALLURGICAL ENGINEERING
Percentile JCR
79.375
SJR Factor
0.682
CiteScore
Q2
Rank Cat.
135/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
4.2
SNIP
1.261
DOI: 10.3390/ma14227081
8.- LATTICE PERFORMANCE DURING INITIAL STEPS OF THE SMART-CUT™ PROCESS IN SEMICONDUCTING DIAMOND: A STEM STUDY 2020 - Applied Surface Science, Vol.528, Issue 2020, pp 146998[1]-146998[6]
Piñero, J.C.; de Vecchy, J.; Fernández, D.; Alba, G.; Widiez, J.; Di Cioccio, L.; Lloret, F.; Araújo, D.; Pernot, J.;
JCR Factor
6.707
JCR
Q1
Rank Cat.
1/21
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.619
SJR Factor
1.295
CiteScore
Q1
Rank Cat.
23/411
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
10.7
SNIP
1.382
9.- INTERFACIAL INTEGRITY ENHANCEMENT OF ATOMIC LAYER DEPOSITED ALUMINA ON BORON DOPED DIAMOND BY SURFACE PLASMA FUNCTIONALIZATION 2020 - Surface and Coatings Technology, Vol.397, Issue 9:2020, pp 125991[1]-125991[11]
Jaggernauth, A.; Silva, R.M.; Neto, M.A.; Oliveira, F.J.; Bdikin, I.K.; Alegre, M.P.; Gutiérrez, M.; Araújo, D.; Mendes, J.C.; Silva, R.F.;
JCR Factor
4.158
JCR
Q1
Rank Cat.
40/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
75.312
SJR Factor
0.904
CiteScore
Q1
Rank Cat.
37/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
6.6
SNIP
1.38
10.- SURFACE STATES OF (100) O-TERMINATED DIAMOND: TOWARDS OTHER 1 × 1:O RECONSTRUCTION MODELS 2020 - Nanomaterials, Vol.10, Issue 6, pp 1-15
Alba, G.; Pilar Villar, M.; Alcántara, R.; Navas, J.; Araújo, D.;
JCR Factor
5.076
JCR
Q1
Rank Cat.
35/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
78.438
SJR Factor
0.919
CiteScore
Q1
Rank Cat.
58/279
Cat. ASJC
CHEMICAL ENGINEERING (ALL)
CiteScore
5.4
SNIP
1.129
DOI: 10.3390/nano10061193
11.- ANALYSIS BY HR-STEM OF THE STRAIN GENERATION IN INP AFTER SIN X DEPOSITION AND ICP ETCHING 2020 - Journal of Electronic Materials, Vol.49, Issue 59, pp 5226-5231
Gutiérrez, M.; Reyes, D.F.; Araújo, D.; Landesman, J.P.; Pargon, E.;
JCR Factor
1.938
JCR
Q3
Rank Cat.
102/160
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
36.562
SJR Factor
0.422
CiteScore
Q2
Rank Cat.
108/292
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.3
SNIP
0.646
12.- HOW TO GROW FULLY (100) ORIENTED SiC/Si/SiC/Si MULTI-STACK 2019 - Physica Status Solidi (A) Applications and Materials Science, Vol.216, Issue 10, pp 1800588[1]-1800588[10]
Yeghoyan, T.; Alassaad, K.; Soulière, V.; Ferro, G.; Gutierrez, M.; Araújo, D.;
JCR Factor
1.759
JCR
Q3
Rank Cat.
94/154
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
39.286
SJR Factor
0.527
CiteScore
Q2
Rank Cat.
101/287
Cat. ASJC
MATERIALS CHEMISTRY
CiteScore
3.1
SNIP
0.728
13.- MICROWAVE PERMITTIVITY OF TRACE SP2 CARBON IMPURITIES IN SUB-MICRON DIAMOND POWDERS 2018 - ACS Omega, Vol.3, Issue 2, pp 2183-2192
Cuenca, J.A.; Thomas, E.L.H.; Mandal, S.; Morgan, D.J.; Lloret, F.; Araújo, D.; Williams, O.A.; Porch, A.;
JCR Factor
2.584
JCR
Q2
Rank Cat.
76/172
Cat. JCR
CHEMISTRY, MULTIDISCIPLINARY
Percentile JCR
56.105
SJR Factor
0.754
CiteScore
Q3
Rank Cat.
162/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
1.4
SNIP
0.683
14.- HIGH QUALITY Al₂O₃/(100) OXYGEN-TERMINATED DIAMOND INTERFACE FOR MOSFETS FABRICATION 2018 - Applied Physics Letters, Vol.112, Issue 10, pp 102103
Pham, T.T.; Gutiérrez, M.; Masante, C.; Rouger, N.; Eon, D.; Gheeraert, E.; Araùjo, D.; Pernot, J.;
JCR Factor
3.521
JCR
Q1
Rank Cat.
31/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
79.392
SJR Factor
1.331
CiteScore
Q1
Rank Cat.
5/49
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.7
SNIP
1.227
DOI: 10.1063/1.5018403
15.- HIGH RESOLUTION BORON CONTENT PROFILOMETRY AT Δ-DOPING EPITAXIAL DIAMOND INTERFACES BY CTEM 2018 - Applied Surface Science, Vol.461, Issue -, pp 221-226
Piñero, J.C.; Lloret, F.; Alegre, M.P.; Villar, M.P.; Fiori, A.; Bustarret, E.; Araújo, D.;
JCR Factor
5.155
JCR
Q1
Rank Cat.
1/20
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.5
SJR Factor
1.115
CiteScore
Q1
Rank Cat.
27/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
7.5
SNIP
1.352
16.- DETERMINATION OF ALUMINA BANDGAP AND DIELECTRIC FUNCTIONS OF DIAMOND MOS BY STEM-VEELS 2018 - Applied Surface Science, Vol.461, Issue -, pp 93-97
Cañas, J.; Piñero, J.C.; Lloret, F.; Gutierrez, M.; Pham, T.; Pernot, J.; Araújo, D.;
JCR Factor
5.155
JCR
Q1
Rank Cat.
1/20
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.5
SJR Factor
1.115
CiteScore
Q1
Rank Cat.
27/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
7.5
SNIP
1.352
17.- OXYGEN TERMINATION OF HOMOEPITAXIAL DIAMOND SURFACE BY OZONE AND CHEMICAL METHODS: AN EXPERIMENTAL AND THEORETICAL PERSPECTIVE 2018 - Applied Surface Science, Vol.433, Issue -, pp 408-418
Navas, J.; Araújo, D.; Piñero, J.C.; Sánchez-Coronilla, A.; Blanco, E.; Villar, P.; Alcántara, R.; Montserrat, J.; Florentin, M.; Eon, D.; Pernot, J.;
JCR Factor
5.155
JCR
Q1
Rank Cat.
1/20
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.5
SJR Factor
1.115
CiteScore
Q1
Rank Cat.
27/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
7.5
SNIP
1.352
18.- THREE-DIMENSIONAL DIAMOND MPCVD GROWTH OVER MESA STRUCTURES: A GEOMETRIC MODEL FOR GROWTH SECTOR CONFIGURATION 2018 - Crystal Growth and Design, Vol.18, Issue 12, pp 7628-7632
Lloret, F.; Araújo, D.; Eon, D.; Bustarret, E.;
JCR Factor
4.153
JCR
Q1
Rank Cat.
3/26
Cat. JCR
CRYSTALLOGRAPHY
Percentile JCR
90.385
SJR Factor
1.046
CiteScore
Q1
Rank Cat.
37/398
Cat. ASJC
CONDENSED MATTER PHYSICS
CiteScore
6.7
SNIP
1.114
19.- IMPACT OF NONHOMOEPITAXIAL DEFECTS IN DEPLETED DIAMOND MOS CAPACITORS 2018 - IEEE Transactions on Electron Devices, Vol.65, Issue 5, pp 1830-1837
Pham, T.T.; Piñero, J.C.; Marechal, A.; Gutierrez, M.; Lloret, F.; Eon, D.; Gheeraert, E.; Rouger, N.; Araújo, D.; Pernot, J.;
JCR Factor
2.704
JCR
Q2
Rank Cat.
52/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
65.203
SJR Factor
0.853
CiteScore
Q1
Rank Cat.
123/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
5
SNIP
1.453
20.- GaSb AND GaSb/AlSb SUPERLATTICE BUFFER LAYERS FOR HIGH-QUALITY PHOTODIODES GROWN ON COMMERCIAL GaAs AND Si SUBSTRATES 2018 - Journal of Electronic Materials, Vol.47, Issue 9, pp 5083-5086
Gutiérrez, M.; Lloret, F.; Jurczak, P.; Wu, J.; Liu, H.Y.; Araújo, D.;
JCR Factor
1.676
JCR
Q3
Rank Cat.
85/148
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
42.905
SJR Factor
0.422
CiteScore
Q2
Rank Cat.
267/669
Cat. ASJC
ELECTRICAL AND ELECTRONIC ENGINEERING
CiteScore
2.5
SNIP
0.724
21.- CRYSTALLINE DEFECTS INDUCED DURING MPCVD LATERAL HOMOEPITAXIAL DIAMOND GROWTH 2018 - Nanomaterials, Vol.8, Issue 10, pp 814[1]-814[10]
Lloret, F.; Eon, D.; Bustarret, E.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8100814
22.- CONTROL OF THE ALUMINA MICROSTRUCTURE TO REDUCE GATE LEAKS IN DIAMOND MOSFETS 2018 - Nanomaterials, Vol.8, Issue 8, pp 584[1]-584[8]
Gutiérrez, M.; Lloret, F.; Pham, T.T.; Cañas, J.; Reyes, D.F.; Eon, D.; Pernot, J.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8080584
23.- BORON-DOPING PROXIMITY EFFECTS ON DISLOCATION GENERATION DURING NON-PLANAR MPCVD HOMOEPITAXIAL DIAMOND GROWTH 2018 - Nanomaterials, Vol.8, Issue 7, pp 480[1]-480[7]
Lloret, F.; Eon, D.; Bustarret, E.; Fiori, A.; Araújo, D.;
JCR Factor
4.034
JCR
Q1
Rank Cat.
71/293
Cat. JCR
MATERIALS SCIENCE, MULTIDISCIPLINARY
Percentile JCR
75.939
SJR Factor
0.896
CiteScore
Q2
Rank Cat.
78/273
Cat. ASJC
GENERAL CHEMICAL ENGINEERING
CiteScore
3.5
SNIP
1.144
DOI: 10.3390/nano8070480
24.- CALIBRATION OF A COHESIVE MODEL FOR FRACTURE IN LOW CROSS-LINKED EPOXY RESINS 2018 - Polymers, Vol.10, Issue 12, pp 1321[1]-1321[20]
Torres, D.; Guo, S.; Villar, M.P..; Araújo, D.; Estevez, R.;
JCR Factor
3.164
JCR
Q1
Rank Cat.
17/89
Cat. JCR
POLYMERS SCIENCE
Percentile JCR
81.034
SJR Factor
0.724
CiteScore
Q2
Rank Cat.
46/151
Cat. ASJC
POLYMERS AND PLASTICS
CiteScore
3
SNIP
1.087
25.- SILICON (001) HETEROEPITAXY ON 3C-SiC(001)/Si(001) SEED 2018 - Materials Science Forum, Vol.924 MSF, Issue -, pp 128-131
Yeghoyan, T.; Alassaad, K.; McMitchell, S.R.C.; Gutierrez, M.; Souliere, V.; Araújo, D.; Ferro, G.;
JCR Factor
-
JCR
-
Rank Cat.
-/-
Cat. JCR
-
Percentile JCR
-
SJR Factor
0.173
CiteScore
Q4
Rank Cat.
465/587
Cat. ASJC
MECHANICAL ENGINEERING
CiteScore
0.5
SNIP
0.314
26.- SOLID SOLUTION STRENGTHENING IN GaSb/GaAs: A MODE TO REDUCE THE TD DENSITY THROUGH BE-DOPING 2017 - Applied Physics Letters, Vol.110, Issue 9, pp 092103[1]-092103[4]
Gutiérrez, M.; Araújo, D.; Jurczak, P.; Wu, J.; Liu, H.;
JCR Factor
3.495
JCR
Q1
Rank Cat.
29/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
80.479
SJR Factor
1.382
CiteScore
Q1
Rank Cat.
4/43
Cat. ASJC
PHYSICS AND ASTRONOMY (MISCELLANEOUS)
CiteScore
6.9
SNIP
1.244
DOI: 10.1063/1.4977489
27.- ATOMIC COMPOSITION OF WC/ AND Zr/O-TERMINATED DIAMOND SCHOTTKY INTERFACES CLOSE TO IDEALITY 2017 - Applied Surface Science, Vol.395, Issue -, pp 200-207
Piñero, J.C.; Araújo, D.; Fiori, A.; Traoré, A.; Villar, M.P.; Eon, D.; Muret, P.; Pernot, J.; Teraji, T.;
JCR Factor
4.439
JCR
Q1
Rank Cat.
1/19
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.368
SJR Factor
1.093
CiteScore
Q1
Rank Cat.
11/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
6.7
SNIP
1.328
28.- TWINS AND STRAIN RELAXATION IN ZINC-BLENDE GaAs NANOWIRES GROWN ON SILICON 2017 - Applied Surface Science, Vol.395, Issue -, pp 195-199
Piñero, J.C.; Araújo, D.; Pastore, C.E.; Gutierrez, M.; Frigeri, C.; Benali, A.; Lelièvre, J.F.; Gendry, M.;
JCR Factor
4.439
JCR
Q1
Rank Cat.
1/19
Cat. JCR
MATERIALS SCIENCE, COATINGS & FILMS
Percentile JCR
97.368
SJR Factor
1.093
CiteScore
Q1
Rank Cat.
11/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
6.7
SNIP
1.328
29.- MPCVD DIAMOND LATERAL GROWTH THROUGH MICROTERRACES TO REDUCE THREADING DISLOCATIONS DENSITY 2017 - Physica Status Solidi (A) Applications and Materials Science, Vol.214, Issue 11, pp 1700242[1]-1700242[5]
Lloret, F.; Gutierrez, M.; Araújo, D.; Eon, D.; Bustarret, E.;
JCR Factor
1.795
JCR
Q2
Rank Cat.
71/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
51.712
SJR Factor
0.648
CiteScore
Q2
Rank Cat.
31/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
3.3
SNIP
0.762
30.- IMPACT OF THERMAL TREATMENTS IN CRYSTALLINE RECONSTRUCTION AND ELECTRICAL PROPERTIES OF DIAMOND OHMIC CONTACTS CREATED BY BORON ION IMPLANTATION 2017 - Physica Status Solidi (A) Applications and Materials Science, Vol.214, Issue 11, pp 1700230[1]-1700230[7]
Piñero, J.C.; Villar, M.P.; Araújo, D.; Montserrat, J.; Antúnez, B.; Godignon, P.;
JCR Factor
1.795
JCR
Q2
Rank Cat.
71/146
Cat. JCR
PHYSICS, APPLIED
Percentile JCR
51.712
SJR Factor
0.648
CiteScore
Q2
Rank Cat.
31/117
Cat. ASJC
SURFACES, COATINGS AND FILMS
CiteScore
3.3
SNIP
0.762
Projects active during the period 2017 - 2021.
1.- VOLAR CON DIAMANTES: ESTRUCTURAS AEROESPACIALES CFRP CONDUCTORAS ELÉCTRICAS Y TÉRMICAS
Ref. P20-00946, Program: Plan Andaluz de Investigación
Organization: CONSEJERIA DE ECONOMIA, CONOCIMIENTO, EMPRESAS Y UNIVERSIDADES Start date: 2021-10-06 End Date: 2022-12-31
Grant: 100.000,00€ Participants: 6
Role: Investigador Principal
Organization: CONSEJERIA DE ECONOMIA, CONOCIMIENTO, EMPRESAS Y UNIVERSIDADES Start date: 2021-10-06 End Date: 2022-12-31
Grant: 100.000,00€ Participants: 6
Role: Investigador Principal
2.- NUEVOS CONFIGURACIONES DE PUERTAS PARA MISFETS DE DIAMANTE CON CANAL OPTO-ACTIVADO :CRECIMIENTO Y CARACTERIZACIÓN
Ref. PID2020-117201RB-C21, Program: Plan Nacional I+D+i
Organization: MINISTERIO DE CIENCIA E INNOVACIÓN Start date: 2021-09-01 End Date: 2024-08-31
Grant: 228.932,00€ Participants: 6
Role: Investigador Principal
Organization: MINISTERIO DE CIENCIA E INNOVACIÓN Start date: 2021-09-01 End Date: 2024-08-31
Grant: 228.932,00€ Participants: 6
Role: Investigador Principal
3.- COMPOSITE DE FIBRA DE CARBONO (CFRP) CONDUCTOR TÉRMICO Y ELÉCTRICO POR PERCOLACIÓN DE NANO-DIAMANTES (CARBO-DIAM)
Ref. FEDER-UCA18-107851, Program: Plan Andaluz de Investigación
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2023-03-31
Grant: 152.500,00€ Participants: 4
Role: Participante
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2023-03-31
Grant: 152.500,00€ Participants: 4
Role: Participante
4.- NUEVAS ALEACIONES DE CARBONO SEMICONDUCTORAS PARA UNA NUEVA GENERACIÓN DE DISPOSITIVOS ELECTRÓNICOS (CARBOTRONICS-PUENTE)
Ref. FEDER-UCA18-106470, Program: Plan Andaluz de Investigación
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2021-03-31
Grant: 45.587,71€ Participants: 6
Role: Investigador Principal
Organization: CONSEJERÍA DE ECONOMÍA Y CONOCIMIENTO. JUNTA DE ANDALUCÍA Start date: 2020-04-01 End Date: 2021-03-31
Grant: 45.587,71€ Participants: 6
Role: Investigador Principal
5.- ARCHITECTURA 3D DE MOSFET ELABORADAS IN-SITU POR MPCVD PARA ELECTRÓNICA DEPOTENCIA.
Ref. TEC2017-86347-C2-1-R, Program: Plan Nacional I+D+i
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2018-01-01 End Date: 2020-12-31
Grant: 156.090,00€ Participants: 4
Role: Investigador Principal
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2018-01-01 End Date: 2020-12-31
Grant: 156.090,00€ Participants: 4
Role: Investigador Principal
6.- GREEN ELECTRONICS WITH DIAMOND POWER DEVICES
Ref. 640947, Program: Programas Europeos
Organization: UNIÓN EUROPEA Start date: 2015-05-01 End Date: 2019-04-30
Grant: 220.000,00€ Participants: 6
Role: Investigador Principal
Organization: UNIÓN EUROPEA Start date: 2015-05-01 End Date: 2019-04-30
Grant: 220.000,00€ Participants: 6
Role: Investigador Principal
7.- DISPOSITIVO DE ALTO VOLTAJE PARA ELECTRÓNICA DE POTENCIA VERDE: RELACIÓN NANOESTRUCTURA-FUNCIÓN.
Ref. TEC2014-54357-C2-2-R, Program: Plan Nacional I+D+i
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2015-01-01 End Date: 2017-12-31
Grant: 150.645,00€ Participants: 6
Role: Investigador Principal
Organization: MINISTERIO DE ECONOMÍA Y COMPETITIVIDAD. PLAN NACIONAL I+D+I Start date: 2015-01-01 End Date: 2017-12-31
Grant: 150.645,00€ Participants: 6
Role: Investigador Principal
Contracts active during the period 2017 - 2021.
There are no records for the period cited.Patents registered
1.- DISPOSITIVO DE ALMACENAMIENTO DE ENERGÍA
Authors: ARAUJO GAY, DANIEL; CHICOT, GAUTHIER
Ref. P201831162 Application date: 2022-12-19
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERIA METALURGICA
Ref. P201831162 Application date: 2022-12-19
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERIA METALURGICA
2.- SUPERCONDENSADOR O BATERÍA DE DIAMANTE Y PROCEDIMIENTO DE FABRICACIÓN DEL MISMO.
Authors: ARAUJO GAY, DANIEL; VILLAR CASTRO, MARIA DEL PILAR
Ref. P201831162 Application date: 2022-12-19
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERIA METALURGICA
Ref. P201831162 Application date: 2022-12-19
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERIA METALURGICA
3.- TRANSISTOR METAL-AISLANTE-SEMICONDUCTOR DE EFECTO CAMPO (MISFET) DE DIAMANTE PARA ALTA POTENCIA CON CANAL OPTO-ACTIVADO
Authors: LLORET VIEIRA, FERNANDO MANUEL; ARAUJO GAY, DANIEL
Ref. P201831162 Application date: 2021-05-31
Licenced: NO Role: Autor
Area: FISICA APLICADA
Ref. P201831162 Application date: 2021-05-31
Licenced: NO Role: Autor
Area: FISICA APLICADA
4.- TRANSISTOR DE EFECTO CAMPO (MOSFET) Y PROCEDIMIENTO DE FABRICACIÓN DEL MISMO.
Authors: ARAÚJO GAY, DANIEL; LLORET VIEIRA, FERNANDO
Ref. P201831162 Application date: 2018-11-29
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Ref. P201831162 Application date: 2018-11-29
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
5.- MOLDE PARA LA FABRICACIÓN DE PROBETAS RECTANGULARES DE ANCHO VARIABLE DE RESINAS EPOXI RTM.
Authors: TORRES URIONA, DERY; ARAÚJO GAY, DANIEL
Ref. P201831162 Application date: 2015-05-18
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Ref. P201831162 Application date: 2015-05-18
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
6.- PROCEDIMIENTO PARA DETERMINAR LA TENACIDAD INTRÍNSECA DE POLÍMEROS.
Authors: VILLAR CASTRO, PILAR; ARAÚJO GAY, DANIEL; TORRES URIONA, DERY; ESTÉVEZ, RAFAEL
Ref. P201831162 Application date: 2015-04-21
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Ref. P201831162 Application date: 2015-04-21
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
7.- SISTEMA DE CATODOLUMINISCENCIA PARA MICROSPCOPIO ELECTRÓNICO DE BARRIDO.
Authors: ARAUJO GAY, DANIEL; GARCÍA FUENTES, ANTONIO JUAN
Ref. P201831162 Application date: 2004-11-11
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Ref. P201831162 Application date: 2004-11-11
Licenced: NO Role: Solicitante
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Software developed
There are no records for the period cited.Theses
1.- CRECIMIENTO LATERAL MPCVD DE DIAMANTE HOMOEPITAXIAL PARA DISPOSITIVOS ELECTRÓNICOS DE POTENCIA
Directors: ARAÚJO GAY, DANIEL
PhD Student: LLORET VIEIRA, FERNANDO Lecture Date: 15/06/2017
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
PhD Student: LLORET VIEIRA, FERNANDO Lecture Date: 15/06/2017
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
2.- ROLE OF INTERFACE CONFIGURATION IN DIAMOND-RELATED POWER DEVICES
Directors: ARAÚJO GAY, DANIEL; VILLAR CASTRO, Mª DEL PILAR
PhD Student: PIÑERO CHARLO, JOSÉ CARLOS Lecture Date: 27/06/2016
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
PhD Student: PIÑERO CHARLO, JOSÉ CARLOS Lecture Date: 27/06/2016
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
3.- CALIDAD CRISTALINA E INCORPORACIÓN DE BORO EN HOMOEPITAXIAS DE DIAMANTE
Directors: VILLAR CASTRO, Mª DEL PILAR; ARAÚJO GAY, DANIEL
PhD Student: ALEGRE SALGUERO, MARÍA DE LA PAZ Lecture Date: 10/02/2015
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
PhD Student: ALEGRE SALGUERO, MARÍA DE LA PAZ Lecture Date: 10/02/2015
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
4.- CÉLULAS FOTOVOLTAICAS DE CONCENTRACIÓN: RELACIÓN ESTRUCTURA VERSUS PROPIEDADES ELECTRÓNICAS
Directors: ARAÚJO GAY, DANIEL
PhD Student: PASTORE, CARLO ENZO Lecture Date: 05/06/2014
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
PhD Student: PASTORE, CARLO ENZO Lecture Date: 05/06/2014
Calification: SOBRESALIENTE/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
5.- CONTRIBUCIÓN A LA MEJORA DE PROPIEDADES EN RESINA DE USO AERONAÚTICO MEDIANTE REFUERZO CON NANOPARTÍCULAS
Directors: ARAÚJO GAY, DANIEL; VILLAR CASTRO, Mª DEL PILAR
PhD Student: TORRES URIONA, DERY Lecture Date: 23/11/2012
Calification: APTO/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
PhD Student: TORRES URIONA, DERY Lecture Date: 23/11/2012
Calification: APTO/CUM LAUDE UNANIMIDAD International Mention: Yes
Area: CIENCIA DE LOS MATERIALES E INGENIERÍA METALÚRGICA
Overview